![Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement | The Journal of Physical Chemistry Letters Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement | The Journal of Physical Chemistry Letters](https://pubs.acs.org/cms/10.1021/acs.jpclett.9b03828/asset/images/medium/jz9b03828_0003.gif)
Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement | The Journal of Physical Chemistry Letters
![Materials | Free Full-Text | The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide | HTML Materials | Free Full-Text | The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide | HTML](https://www.mdpi.com/materials/materials-09-00333/article_deploy/html/images/materials-09-00333-g005.png)
Materials | Free Full-Text | The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide | HTML
![Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study - ScienceDirect Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0749603619315654-gr4.jpg)
Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study - ScienceDirect
![Table I from A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications | Semantic Scholar Table I from A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/aeb70d2a5ff5f863be7f597bcb5644cbed515280/2-TableI-1.png)