PS of n-type doped 4H-SiC against photon energy. The indirect band gap... | Download Scientific Diagram
Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement | The Journal of Physical Chemistry Letters
Materials | Free Full-Text | The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide | HTML
Dispersion of nonresonant third-order nonlinearities in Silicon Carbide | Scientific Reports
Direct and indirect band gaps - Wikipedia
Tuning the indirect–direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: a quasiparticle GW study - Journal of Materials Chemistry (RSC Publishing)
Figure 1 | The suitability of silicon carbide for photocatalytic water oxidation | SpringerLink